Electrical and Optical Properties of Ge_𝑥Si_𝟏−𝑥:H Thin Films Prepared by Thermal Evaporation Method

Figure 1

Variation of ln𝜎 with reciprocal of (𝑘𝑇) for a-Ge_𝑥Si_1−𝑥:H, thin films, deposited at different substrate temperatures: (a) RT, (b) 373 K, and (c) 503 K.

(a)

(b)

(c)