Electrical and Optical Properties of Ge_𝑥Si_𝟏−𝑥:H Thin Films Prepared by Thermal Evaporation Method

Figure 6

Variation of (a) 𝜀₁ and (b) 𝜀₂ with Ge content for pure and doped (3.5% As and 3.5% Al) for a-Ge_𝑥Si_1−𝑥:H films.

(a)

(b)