TEM Observation of the Dislocations Nucleated from Cracks inside Lightly or Heavily Doped Czochralski Silicon Wafers

<table>Cross-sectional TEM images of lightly B doped Si including crack generated from indent (point A in Figure <a href="../fig1/">1</a>) introduced with Vickers hardness tester with load of 100 gf for 10 sec.</table>

Advances in Condensed Matter Physics

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Figure 2

Figure 2: TEM Observation of the Dislocations Nucleated from Cracks inside Lightly or Heavily Doped Czochralski Silicon Wafers 