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Advances in Condensed Matter Physics
Volume 2015 (2015), Article ID 379746, 7 pages
Research Article

DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS

1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, China
2Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China
3School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

Received 21 October 2014; Accepted 4 November 2014

Academic Editor: Rui Zhang

Copyright © 2015 Xiangming Xu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Xiangming Xu, Pengliang Ci, Xiaoyu Tang, et al., “DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS,” Advances in Condensed Matter Physics, vol. 2015, Article ID 379746, 7 pages, 2015. doi:10.1155/2015/379746