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Advances in Condensed Matter Physics
Volume 2015, Article ID 423074, 5 pages
Research Article

Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

1School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
2Shanghai HuaHong NEC Electronics Company, Shanghai 201206, China

Received 14 June 2014; Accepted 25 August 2014

Academic Editor: Rui Zhang

Copyright © 2015 Xiao-Yu Tang and Ke Dong. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications. However, there have been few detailed reports about the polysilicon resistors’ characteristics, like voltage and temperature coefficients and breakdown behaviors which are critical parameters of high voltage applications. In this study, we experimentally find that the resistance of the polysilicon resistor with a relatively low doping concentration shows negative voltage and temperature coefficients, while that of the polysilicon resistor with a high doping concentration has positive voltage and temperature coefficients. Moreover, from the experimental results of breakdown voltages of the polysilicon resistors, it could be deduced that the breakdown of polysilicon resistors is thermally rather than electrically induced. We also proposed to add an N-type well underneath the oxide to increase the breakdown voltage in the vertical direction when the substrate is P-type doped.