Analytical Model of Subthreshold Drain Current Characteristics of Ballistic Silicon Nanowire Transistors

Figure 4

Central electric potential along the channel obtained from the model and TCAD simulation for different gate lengths. Nanowire radius is (a) 4 nm; (b) 3 nm. The other device parameters are obtained from Table 1. The solid lines and symbols are for drain bias of 0.05 V; the dashed lines and open symbols are for drain bias of 0.5 V.

(a)

(b)