Analytical Model of Subthreshold Drain Current Characteristics of Ballistic Silicon Nanowire Transistors

Figure 6

Subthreshold transfer characteristics obtained from the model and TCAD simulation for different gate lengths. Drain bias is 0.05 V. (a) Radius is 3 nm; (b) oxide thickness is 2 nm. The other device parameters are obtained from Table 1.

(a)

(b)