Analytical Model of Subthreshold Drain Current Characteristics of Ballistic Silicon Nanowire Transistors

Figure 7

Dependence of (a) subthreshold slope and (b) threshold voltage roll-off on the gate length for different nanowire radii calculated from compact model and TCAD simulation. Drain bias is 0.05 V. Device parameters, except gate length, are listed in Table 1.

(a)

(b)