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Advances in Condensed Matter Physics
Volume 2015, Article ID 639218, 9 pages
Review Article

Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

Department of Information Science and Electronic Engineering, Zhejiang University, No. 38 Zheda Road, Hangzhou 310027, China

Received 3 October 2014; Accepted 1 December 2014

Academic Editor: Rui Zhang

Copyright © 2015 Jiabao Sun and Jiwu Lu. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [2 citations]

The following is the list of published articles that have cited the current article.

  • Zhi Xiang Cheng, Jing Ping Xu, Lu Liu, Yong Huang, Pui To Lai, and Wing Man Tang, “Effective passivation of HfO2/Ge interface by using nitrided germanate as passivation interlayer,” Physica Status Solidi (A) Applications and Materials Science, vol. 214, no. 6, 2017. View at Publisher · View at Google Scholar
  • Yi-Ting Cheng, Yen-Hsun Lin, Wan-Sin Chen, Keng-Yung Lin, Hsien-Wen Wan, Chiu-Ping Cheng, Hung-Hsiang Cheng, Jueinai Kwo, Minghwei Hong, and Tun-Wen Pi, “Surface electronic structure of epi germanium (001)-2 ? 1,” Applied Physics Express, vol. 10, no. 7, pp. 075701, 2017. View at Publisher · View at Google Scholar