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Advances in Condensed Matter Physics
Volume 2015, Article ID 639218, 9 pages
http://dx.doi.org/10.1155/2015/639218
Review Article

Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

Department of Information Science and Electronic Engineering, Zhejiang University, No. 38 Zheda Road, Hangzhou 310027, China

Received 3 October 2014; Accepted 1 December 2014

Academic Editor: Rui Zhang

Copyright © 2015 Jiabao Sun and Jiwu Lu. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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