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Advances in Condensed Matter Physics
Volume 2015, Article ID 785415, 9 pages
Research Article

High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

1National Institute of Aerospace (NIA), 100 Exploration Way, Hampton, VA 23666, USA
2KAIST Research Analysis Center (KARA), Korea Advanced Institute of Science and Technology (KAIST), Science Road, Yuseong-Gu, Daejeon 305-701, Republic of Korea
3NASA Langley Research Center, Hampton, VA 23681-2199, USA

Received 1 September 2014; Revised 28 November 2014; Accepted 29 November 2014

Academic Editor: Yi Zhao

Copyright © 2015 Hyun Jung Kim et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Hyun Jung Kim, Yeonjoon Park, Hyung Bin Bae, and Sang H. Choi, “High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets,” Advances in Condensed Matter Physics, vol. 2015, Article ID 785415, 9 pages, 2015.