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Advances in Condensed Matter Physics
Volume 2015, Article ID 785415, 9 pages
http://dx.doi.org/10.1155/2015/785415
Research Article

High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

1National Institute of Aerospace (NIA), 100 Exploration Way, Hampton, VA 23666, USA
2KAIST Research Analysis Center (KARA), Korea Advanced Institute of Science and Technology (KAIST), Science Road, Yuseong-Gu, Daejeon 305-701, Republic of Korea
3NASA Langley Research Center, Hampton, VA 23681-2199, USA

Received 1 September 2014; Revised 28 November 2014; Accepted 29 November 2014

Academic Editor: Yi Zhao

Copyright © 2015 Hyun Jung Kim et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. D. L. Harame and B. S. Meyerson, “The early history of IBM's SiGe mixed signal technology,” IEEE Transactions on Electron Devices, vol. 48, no. 11, pp. 2555–2567, 2001. View at Publisher · View at Google Scholar · View at Scopus
  2. C. Gui, M. Elwenspoek, N. Tas, and J. G. E. Gardeniers, “The effect of surface roughness on direct wafer bonding,” Journal of Applied Physics, vol. 85, no. 10, pp. 7448–7454, 1999. View at Publisher · View at Google Scholar · View at Scopus
  3. “Semiconductor Wafer edge analysis,” Chapman Technical Note TW-1, 1998.
  4. H. Ahmataku and K. Kipli, in Proceedings of the IEEE International Conference on Semiconductor Electronics (ICSE '10), Melaka, Malaysia, June 2010.
  5. I. McMackin, W. Martin, J. Perez et al., “Patterned wafer defect density analysis of step and flash imprint lithography,” Journal of Vacuum Science & Technology B, vol. 26, no. 1, pp. 151–155, 2008. View at Publisher · View at Google Scholar · View at Scopus
  6. S. A. Alterovitz, C. H. Mueller, and E. T. Croke, “High mobility SiGe/Si transistor structures on sapphire substrates using ion implantation,” Journal of Vacuum Science & Technology B, vol. 22, p. 1776, 2004. View at Publisher · View at Google Scholar
  7. K. Ismail, M. Arafa, K. L. Saenger, J. O. Chu, and B. S. Meyerson, “Extremely high electron mobility in Si/SiGe modulation-doped heterostructures,” Applied Physics Letters, vol. 66, no. 9, pp. 1077–1079, 1995. View at Publisher · View at Google Scholar · View at Scopus
  8. S. J. Koester, R. Hammond, J. O. Chu et al., “SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax,” IEEE Electron Device Letters, vol. 22, no. 2, pp. 92–94, 2001. View at Publisher · View at Google Scholar · View at Scopus
  9. W. B. Dubbelday and K. L. Kavanagh, “Growth of SiGe on sapphire using rapid thermal chemical vapor deposition,” Journal of Crystal Growth, vol. 222, no. 1-2, pp. 20–28, 2001. View at Publisher · View at Google Scholar · View at Scopus
  10. Y. Park, H. J. Kim, G. C. King, and S. H. Choi, “X-ray diffraction wafer mapping method for SiGe twin defects characterization,” in Nanosensors, Biosensors, and Info-Tech Sensors and Systems, vol. 7980 of Proceedings of SPIE, April 2011. View at Publisher · View at Google Scholar
  11. M. W. Jenkins, “A new preferential etch for defects in silicon crystals,” Journal of the Electrochemical Society: Solid-State Science and Technology, vol. 124, no. 5, pp. 757–762, 1977. View at Google Scholar
  12. F. Secco d'Aragona, “Dislocation etch for (100) planes in silicon,” Journal of The Electrochemical Society, vol. 119, no. 7, pp. 948–951, 1972. View at Publisher · View at Google Scholar
  13. E. Sirtl and A. Adler, “Chromic acid-hydrofluoric acid as specific reagents for the development of etching pits in silicon,” Zeitschrift für Metallkunde, vol. 52, pp. 529–534, 1961. View at Google Scholar
  14. W. C. Dash, “Copper precipitation on dislocations in silicon,” Journal of Applied Physics, vol. 27, no. 10, pp. 1193–1195, 1956. View at Publisher · View at Google Scholar · View at Scopus
  15. H. Rauh, Wacker’s Atlas for Characterization of Defects in Silicon, A Part of the Wacker Tutorial Series, 1986.
  16. M. Glicksman, “Mobility of Electrons in Germanium-Silicon Alloys,” Physical Review, vol. 111, no. 1, pp. 125–128, 1958. View at Publisher · View at Google Scholar · View at Scopus
  17. M. V. Fischetti and S. E. Laux, “Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys,” Journal of Applied Physics, vol. 80, no. 4, pp. 2234–2252, 1996. View at Publisher · View at Google Scholar · View at Scopus
  18. T. E. Whall and E. H. C. Parker, “Si/SiGe/Si pMOS performance—alloy scattering and other considerations,” Thin Solid Films, vol. 368, pp. 297–305, 2000. View at Publisher · View at Google Scholar
  19. C. Jacoboni, C. Canali, G. Ottaviani, and A. Alberigi Quaranta, “A review of some charge transport properties of silicon,” Solid State Electronics, vol. 20, no. 2, pp. 77–89, 1977. View at Publisher · View at Google Scholar · View at Scopus
  20. V. I. Fistul, M. I. Iglitsyn, and E. M. Omelyanovskii, “Mobility of electrons in germanium strongly doped with arsenic,” Soviet Physics, Solid State, vol. 4, no. 4, pp. 784–785, 1962. View at Google Scholar
  21. Landolt-Börnstein, New Series Group III, vol. 17a, Springer, Berlin, Germany, 1982.
  22. F. C. Frank and J. H. van de Merwe, “One-dimensional dislocations. I. Static theory,” Proceedings of the Royal Society of London: Series A, vol. 198, no. 1053, pp. 205–216, 1949. View at Publisher · View at Google Scholar
  23. F. C. Frank and J. H. van de Merwe, “One-dimensional dislocations. IV. Dynamics,” Proceedings of the Royal Society of London A, vol. 201, no. 1065, pp. 261–268, 1950. View at Publisher · View at Google Scholar
  24. E. Escobedo-Cousin, S. H. Olsen, A. G. O'Neill, and H. Coulson, “Defect identification in strained Si/SiGe heterolayers for device applications,” Journal of Physics D: Applied Physics, vol. 42, no. 17, Article ID 175306, 2009. View at Publisher · View at Google Scholar · View at Scopus
  25. J. G. Fiorenza, G. Braithwaite, C. W. Leitz et al., “Film thickness constraints for manufacturable strained silicon CMOS,” Semiconductor Science and Technology, vol. 19, no. 1, article L4, 2004. View at Publisher · View at Google Scholar · View at Scopus
  26. J. N. Yang, G. W. Neudeck, and J. P. Denton, “Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal-oxide-semiconductor field-effect transistors,” Journal of Applied Physics, vol. 91, no. 1, pp. 420–426, 2002. View at Google Scholar
  27. P. I. Gaiduk, A. Nylandsted Larsen, and J. Lundsgaard Hansen, “Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density,” Thin Solid Films, vol. 367, no. 1-2, pp. 120–125, 2000. View at Publisher · View at Google Scholar · View at Scopus
  28. L. J. Huang, J. O. Chu, D. F. Canaperi et al., “SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors,” Applied Physics Letters, vol. 78, no. 9, pp. 1267–1269, 2001. View at Publisher · View at Google Scholar · View at Scopus
  29. T. Tezuka, N. Sugiyama, T. Mizuno, M. Suzuki, and S. Takagi, “A novel fabrication technique of ultrathin and relaxed SiGe buffer layers with high Ge fraction for Sub-100 nm strained silicon-on-insulator MOSFETs,” Japanese Journal of Applied Physics, vol. 40, part 1, no. 4B, pp. 2866–2874, 2001. View at Publisher · View at Google Scholar
  30. S. Nakaharai, T. Tezuka, N. Sugiyama, Y. Moriyama, and S.-I. Takagi, “Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique,” Applied Physics Letters, vol. 83, no. 17, pp. 3516–3518, 2003. View at Publisher · View at Google Scholar · View at Scopus
  31. T. Shimura, K. Kawamura, M. Asakawa et al., “Characterization of strained Si wafers by X-ray diffraction techniques,” Journal of Materials Science: Materials in Electronics, vol. 19, no. 1, supplement, pp. S189–S193, 2008. View at Publisher · View at Google Scholar · View at Scopus
  32. N. Sugii, S. Yamaguchi, and K. Washio, “SiGe-on-insulator substrate fabricated by melt solidification for a strained-silicon complementary metal–oxide–semiconductor,” Journal of Vacuum Science & Technology B, vol. 20, no. 5, pp. 1891–1896, 2002. View at Publisher · View at Google Scholar
  33. H.-J. Kim, H.-B. Bae, Y. Park, K. Lee, and S. H. Choi, “Temperature dependence of crystalline SiGe growth on sapphire (0001) substrates by sputtering,” Journal of Crystal Growth, vol. 353, no. 1, pp. 124–128, 2012. View at Publisher · View at Google Scholar · View at Scopus
  34. Y. Park, G. C. King, and S. H. Choi, “Rhombohedral epitaxy of cubic SiGe on trigonal c-plane sapphire,” Journal of Crystal Growth, vol. 310, no. 11, pp. 2724–2731, 2008. View at Publisher · View at Google Scholar · View at Scopus
  35. H. J. Kim, H. B. Bae, Y. Park, and S. H. Choi, “Defect-engineered Si1−xGex alloy under electron beam irradiation for thermoelectrics,” RSC Advances, vol. 2, no. 33, pp. 12670–12674, 2012. View at Publisher · View at Google Scholar
  36. Y. Park, S. H. Choi, and G. C. King, “Silicon germanium semiconductive alloy and method of fabricating same,” US Patent no. 7,341,883, 2008.
  37. Y. Park, S. H. Choi, G. C. King, J. R. Elliott Jr., and D. M. Stoakley, “Graded index silicon geranium on lattice matched silicon geranium semiconductor alloy,” US Patent No. 7514726 B2, 2009.
  38. Y. Park, S. Hyouk Choi, G. C. King, and J. R. Elliott, “Method of generating X-ray diffraction data for integral detection of twin defects in super-hetero-epitaxial materials,” US Patent no. 7,558,371 B2, 2009.
  39. Y. Park, S. H. Choi, and G. C. King, “Epitaxial growth of cubic crystalline semiconductor alloys on basal plane of trigonal or hexagonal crystal,” US Patent no. 7,906,358 B2, 2011.
  40. T. Maniwa, “Steering apparatus,” US Patent No. 8,826,767, 2012.
  41. Y. Park, S. H. Choi, G. C. King, and J. R. Elliott, “Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials,” US Patent no. 8,257,491 B2, 2012.
  42. Y. Park, S. H. Choi, G. C. King, J. R. Elliott, and A. L. Dimarcantonio, “X-ray diffraction wafer mapping method for rhombohedral super-hetero-epitaxy,” US Patent No. 7769135 B2, 2010.