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Advances in Condensed Matter Physics
Volume 2015, Article ID 834545, 6 pages
Research Article

The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
2Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China

Received 21 January 2015; Accepted 15 February 2015

Academic Editor: Rui Zhang

Copyright © 2015 Donghua Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper presents a 500 V high voltage NLDMOS with breakdown voltage () improved by field plate technology. Effect of metal field plate (MFP) and polysilicon field plate (PFP) on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance ( = 7.88 ohm * mm2) are achieved.