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Advances in Condensed Matter Physics
Volume 2015 (2015), Article ID 834545, 6 pages
http://dx.doi.org/10.1155/2015/834545
Research Article

The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
2Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China

Received 21 January 2015; Accepted 15 February 2015

Academic Editor: Rui Zhang

Copyright © 2015 Donghua Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Donghua Liu, Xiangming Xu, Feng Jin, et al., “The Investigation of Field Plate Design in 500 V High Voltage NLDMOS,” Advances in Condensed Matter Physics, vol. 2015, Article ID 834545, 6 pages, 2015. doi:10.1155/2015/834545