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Research Letters in Materials Science
Volume 2007 (2007), Article ID 26459, 5 pages
Research Letter

RF Power and Thermal Annealing Effect on the Properties of Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering

1Research Institute, Kochi University of Technology, Kami, Kochi 782-8502, Japan
2Kochi Industrial Promotion Center, Kami, Kochi 782-8502, Japan
3Kochi Casio Co. Ltd., Nankoku, Kochi 782-8502, Japan

Received 6 August 2007; Accepted 30 October 2007

Academic Editor: Hiroki Habazaki

Copyright © 2007 Chaoyang Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Polycrystalline zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron sputtering under different powers. The XRD results showed that ZnO crystallite size along c-axis decreased by 43% with deposition power increased from 60 W to 300 W, increased 36% with annealing temperature rising to 400C. TDS measurement revealed that the desorption peaks of both atomic Zn (60 W-deposited) and oxygen molecule (180 W and 300 W-deposited) obtained from ZnO films were originated from 300C. When annealing temperature was higher than 300C, the sheet resistance dramatically decreased, and compressive stress in the (002) plane changed to tensile stress as well. The comparison measurements of ZnO films crystallinity strongly suggested that both lower deposition power and certain thermal annealing temperature over 300C would contribute to the formation of high quality ZnO films.