Low Dark Current Mesa-Type AlGaN Flame Detectors

Chen, Lung-Chien

doi:https://doi.org/10.1155/2007/62825

Advances in Materials Science and Engineering

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Research Letter | Open Access

Volume 2007 | Article ID 062825 | https://doi.org/10.1155/2007/62825

Low Dark Current Mesa-Type AlGaN Flame Detectors

Lung-Chien Chen¹

Academic Editor: Dao Hua Zhang

Received17 Aug 2007

Accepted09 Oct 2007

Published18 Nov 2007

Abstract

This study characterizes and reports on the fabrication process of AlGaN flame photodetectors with an Al0.1Ga0.9N/GaN superlattice structure. The AlGaN flame photodetectors exhibited a low dark current (∼1.17×10−10 A at bias of −5 V) and large rejection ratio of photocurrent (∼2.14×10−5 A at bias of -5 V) to dark current, which is greater than five orders of magnitude. Responsivity at 350 nm at a bias of -5 V was 0.194 A/W. Quantum efficiency, η, was 0.687 at a reverse bias of 5 V.

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Copyright

Copyright © 2007 Lung-Chien Chen. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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