Growth and Characterization of <mml:math id="E1" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mtext>Cd</mml:mtext><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>X</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mtext>Zn</mml:mtext><mml:mi>X</mml:mi></mml:msub></mml:math>Te-Sintered Films

Kumar, V.; Sandhu, G. S.; Sharma, T. P.; Hussain, M.

doi:https://doi.org/10.1155/2007/63702

Advances in Materials Science and Engineering

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Research Letter | Open Access

Volume 2007 | Article ID 063702 | https://doi.org/10.1155/2007/63702

Growth and Characterization of Cd1−XZnXTe-Sintered Films

V. Kumar,¹G. S. Sandhu,²T. P. Sharma,³and M. Hussain⁴

Academic Editor: Tsutomu Ohzuku

Received29 Jun 2007

Accepted31 Oct 2007

Published06 Dec 2007

Abstract

The II-VI polycrystalline semiconducting materials have come under increased scrutiny because of their wide use in the cost reduction of devices for photovoltaic applications. Cd1−XZnXTe is one of the II-VI ternary semiconductor materials whose bandgap can be tailored to any value between 1.48–2.26 eV as X varies from 0 to 1. It is promising material for high-efficiency solar cells, switching, and other optoelectronic devices. Polycrystalline thin film of Cd1−XZnXTe with variable composition (0≤X≤1) has been deposited on ultraclean glass substrates by screen printing method followed by sintering process. The optical and structural properties of Cd1−XZnXTe thin films have been examined. The optical bandgap of these films is studied using reflection spectra in wavelength range of 350–900 nm by using double beam spectrophotometer. The structure of sample was determined from X-ray diffraction patterns. The films were polycrystalline in nature having wurtzite (Hexagonal) structure over the whole range studied. The lattice parameters vary almost linearly with the composition parameter X, following Vegard's law. Sintering is a very simple and viable method compared to other cost-intensive methods. The results of the present investigation will be useful in characterizing the material CdZnTe for its applications in photovoltaics.

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Copyright © 2007 V. Kumar et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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