Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing
Figure 1
Formation of Ni2Ge/Ge/Ni2Ge heterostructures. Schematic illustration showing (a) before and (b) after the diffusion process of Ni into the Ge nanowire forming a Ni2Ge/Ge/Ni2Ge heterostructure. (c) SEM image of the Ge nanowire device with EBL defined Ni electrodes. (d) SEM image of the Ni2Ge/Ge/Ni2Ge heterostructure after RTA at 500°C for 60 s in which the length of the Ge region was easily controlled to submicron range. The arrows indicate the growth tips of the Ni2Ge nanowire. (e) SEM image of the Ni2Ge/Ge/Ni2Ge heterostructure after RTA at 400°C for 40 s. The arrows indicate the growth tips of the Ni2Ge nanowire. Reproduced from [13].
