Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing
Figure 11
(a) TEM image of a Ge nanowire in point-contact with two Ni nanowires on the TEM grid at room temperature. (b) TEM image showing the diffusion of Ni into the Ge nanowire upon 450°C annealing. The red arrows indicate the growth tip of the NixGe nanowire. (c) TEM image of another Ge nanowire in point contact with a Ni nanowire on the TEM grid at room temperature. (d) TEM image showing the diffusion of Ni into the Ge nanowire upon 450°C annealing. The red circle highlights the consumption of Ni in the formation of the NixGe nanowire upon annealing. Also, the segregation of NixGe nanoparticles was not observed in the Ni-Ge nanowire point-contact system upon annealing.
