Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

Table 1

Summary of Si and Ge nanowire heterostructures formed by solid-state reactions between a semiconductor nanowire and metal contacts.

Material system	Annealing condition (°C)	Formed silicide/germanide	Metal diffusion source
Ni-Si [6]	550	NiSi	Ni contact pad
Ni-Si [7]	470	NiSix (not identified)	Ni contact pad
Ni-Si [8]	500–700	NiSi	Ni nanowire
Co-Si [9]	700	CoSi	Co nanodots
	800	Co2Si	Co nanodots
Pt-Si [10]	520	PtSi	Pt contact pad
Mn-Si [11]	650	MnSi	Mn contact pad
Ni-Ge [13]	400–500	Ni2Ge	Ni contact pad
Ni-Ge [14]	450 (capped with Al2O3)	Ni2Ge/NiGe	Ni contact pad
Ni-Ge [15]	300–450	Ni2Ge	Ni contact pad
Cu-Ge [16–18]	310	Cu3Ge	Cu contact pad