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Advances in Materials Science and Engineering
Volume 2011, Article ID 483437, 7 pages
Research Article

Thermal Stability and Tribological Performance of DLC-Si–O Films

Department of Systems Engineering, Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro Machi, Saitama 345-8501, Japan

Received 13 June 2011; Accepted 22 August 2011

Academic Editor: Paul Munroe

Copyright © 2011 Nutthanun Moolsradoo et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The thermal stability and tribological performance of silicon- and oxygen-incorporated diamond-like carbon films were investigated. The DLC-Si-O films were deposited using plasma-based ion implantation (PBII) method. The deposited films were annealed at 400°C, 600°C, and 750°C for 1 hour in vacuum, in argon, and in air atmospheres. Film properties were investigated using the Fourier transforms infrared spectroscopy, Raman spectroscopy, energy dispersive X-ray spectroscopy, and a ball-on-disk friction tester. The structures of the DLC-Si-O films with a low Si content ( 25 at.%Si, 1 at.%O) and high Si content ( > 25 at.%Si, > 1 at.%O) were not affected by the thermal annealing in vacuum at 400°C and 600°C, respectively, while they were affected by thermal annealing in argon and in air at 400°C. Film with 34 at.%Si and 9 at.%O after annealing demonstrated almost constant atomic contents until annealing at 600°C in vacuum. The friction coefficient of DLC-Si–O films with 34 at.%Si and 9 at.%O was shown to be relatively stable, with a friction coefficient of 0.04 before annealing and 0.05 after annealing at 600°C in vacuum. Moreover, the low friction coefficient of film annealed at 600°C in vacuum with 34 at.%Si and 9 at.%O was corresponded with low wear rate of 1.85 × 10−7 mm3/Nm.