Research Article
Thermal Stability and Tribological Performance of DLC-Si–O Films
Table 1
Relative atomic content and internal stress of DLC-Si–O films as a function of gas flow.
| Pressure (Pa) | Gas flow C2H2 : TMS : O2 (sccm) | Relative atomic content (at.%) | Deposition rate (nm/min) | Internal stress (GPa) | C | Si | O |
| 2 | 14 : 1 : 2 | 57 | 34 | 9 | 3.0 | 0.15 | 3 | 28 : 1 : 2 | 65 | 31 | 4 | 4.4 | 0.27 | 4 | 46 : 1 : 2 | 74 | 25 | 1 | 5.3 | 0.32 | 5 | 67 : 1 : 2 | 77 | 22 | <1 | 7.7 | 0.25 | 6 | 89 : 1 : 2 | 78 | 21 | <1 | 9.2 | 0.23 | 2 | C2H2 only | — | — | — | 3.3 | 2.85 |
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