Thermal Stability and Tribological Performance of DLC-Si–O Films

Table 1

Relative atomic content and internal stress of DLC-Si–O films as a function of gas flow.

Pressure (Pa)	Gas flow C2H2 : TMS : O2 (sccm)	Relative atomic content (at.%)			Deposition rate (nm/min)	Internal stress (GPa)
		C	Si	O
2	14 : 1 : 2	57	34	9	3.0	0.15
3	28 : 1 : 2	65	31	4	4.4	0.27
4	46 : 1 : 2	74	25	1	5.3	0.32
5	67 : 1 : 2	77	22	<1	7.7	0.25
6	89 : 1 : 2	78	21	<1	9.2	0.23
2	C2H2 only	—	—	—	3.3	2.85