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Advances in Materials Science and Engineering
Volume 2011 (2011), Article ID 974906, 5 pages
Research Article

The Electrical Characteristics of Aluminium Doped Zinc Oxide Thin Film for Humidity Sensor Applications

Nano-Electronic Centre, Faculty of Electrical Engineering, University Teknologi Mara, 40450 Shah Alam, Selangor, Malaysia

Received 15 April 2011; Revised 29 May 2011; Accepted 6 June 2011

Academic Editor: A. John Peter

Copyright © 2011 N. D. Md Sin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The electrical characteristics of aluminum (Al) doped zinc oxide (ZnO) thin film for high sensitivity humidity sensors are presented. The effects of Al doping concentration at 0 0 . 6 at % on the Al doped ZnO thin film properties were investigated using current-voltage measurement. The optical and structural properties were characterized using photoluminescence (PL), scanning emission microscope (SEM), and X-ray diffraction (XRD). Parameter 0.6 at % Aluminum doped show high sensitivity and suitable for humidity sensor. PL show an emissions band with two peaks centered at about 380 nm (ultra-violet (UV)) and 600 nm (green) in a room temperature. The length of the nanorods increases as the doping concentration increases. XRD results show the intensity of the (002) peak decreased with the increasing of doping concentration.