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Advances in Materials Science and Engineering
Volume 2013 (2013), Article ID 362053, 5 pages
http://dx.doi.org/10.1155/2013/362053
Research Article

Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

Department of Electronic Engineering, Ming Chuan University, Taoyuan 333, Taiwan

Received 27 September 2013; Accepted 7 November 2013

Academic Editor: Chun-Hsing Shih

Copyright © 2013 Fu-Chien Chiu. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low resistance state due to the formation of filamentary conducting path. The dependence of pulse width and temperature on set/reset voltages was examined in this work. The exponentially decreasing trend of set/reset voltage with increasing pulse width is observed except when pulse width is larger than 1 s. Hence, to switch the ZnO memory devices, a minimum set/reset voltage is required. The set voltage decreases linearly with the temperature whereas the reset voltage is nearly temperature-independent. In addition, the ac cycling endurance can be over 106 switching cycles, whereas, the dependence of HRS/LRS resistance distribution indicates that a significant memory window closure may take place after about 102  dc switching cycles.