Charge-Trapping Devices Using Multilayered Dielectrics for Nonvolatile Memory Applications

<table>Erase characteristics of the Al/Y<sub>2</sub>O<sub>3</sub>/Ta<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub>/Si transistors.</table>

Advances in Materials Science and Engineering

Figure 4: Charge-Trapping Devices Using Multilayered Dielectrics for Nonvolatile Memory Applications 