Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor
Figure 7
Effective coercive voltage () applied to PZT films and reduction values () of memory window by charge injection in the ITO/LO/PZT structure. The values of charge injection are at the same gate voltage, where is twice the coercive voltage at the real applied voltage on the PZT film only.
