Influence of Sulfurization Temperature on Photoelectric Properties Cu₂SnS₃ Thin Films Deposited by Magnetron Sputtering

Table 3

Electrical properties of the CTS thin films sulfurized at different temperatures.

Samples	Conductive type	Carrier concentration (cm^−3)	Mobility; (cm^2/V·s)	Resistivity (Ω·cm)
CTS-1	P	2.0 × 10^18	3.5 × 10^−1	8.8
CTS-2	P	7.4 × 10^18	2.8 × 10^−1	3
CTS-3	P	2.8 × 10^18	3.1 × 10^−1	7.1
CTS-4	P	2.3 × 10^17	9	3