Advances in Materials Science and Engineering / 2013 / Article / Fig 1

Research Article

Comparison of H2 and NH3 Treatments for Copper Interconnects

Figure 1

AES depth profile of Si, N, O, and Cu atomic concentrations in the Cu/SiN multilayer structures (a) without plasma treatment and (b) with 30 s NH3 plasma treatment.
825195.fig.001a
(a)
825195.fig.001b
(b)

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