Review Article
Application of Electron Beam Melting to the Removal of Phosphorus from Silicon: Toward Production of Solar-Grade Silicon by Metallurgical Processes
Table 2
Previous research on removal of P by EB melting.
| | EB power/kW | Weight of Si sample/kg (or supply rate) | Temperature/K | Chamber pressure/Pa | P content in ppm (time) | Apparent mass transfer coefficient, /m s−1 |
| Ikeda and Maeda (1992) [6] | 3.8~6.5 | 0.05 | 1867~1967 | | 38~45→ 3 (900 s) | | Hanazawa et al. (2003, 2004) [22, 23] | | | | | | | (i) Batch process in laboratory scale | 30~100 | 1.2~6.6 | 1950~2300 | 1.3~ | 30→0.05-0.06 (2200 s) | | (ii) Batch process in industrial scale | 190, 210 | 45 | | 2.7~ | | | (iii) Continuous process in laboratory scale | 80 | 2~12 kgh−1 (supply rate) | | 1.3~ | 25–30→0.3 (4600 s) | | (iv) Continuous process in industrial scale | 220, 250 | 16–70 kgh−1 (supply rate) | | 1.3~ | 25–30→0.1 (4200 s) | | Pires et al. (2003) [24] | | | | | | | Observation of segregation | 14–17 | 0.28 (powder) | NA | | ?→0.28–5.5 (1200 s) | | Pires et al. (2005) [25] | 15–17 | 0.28 (powder) | NA | | 23→0.41 (1200 s) | | | 0.28 (massive) | | | 38→0.39 (1200 s) | | Miyake et al. (2006) [20] | | | | | | | Glow discharge EB | 2.6~4.8 | 0.04 | 1850 | 5~7 | 140~230→1 (3600 s) | | Kemmotsu et al. (2011) [19] | | | | | | | (i) Water-cooled Cu crucible | 2.6 | 0.04 | 1860 | 10−2 | 87→2.9 (1800 s) | (1860 K) | (ii) Graphite crucible | 2.6 | 0.04 | 1980 | 10−2 | 166→0.9 (1800 s) | | (iii) Graphite crucible | 4.8 | 0.04 | 2520 | 10−2 | 62→5.2 (180 s) | | (iv) Stirred by Ar bubbling | | | | | 37→10 (90 s) | | (v) 0.1% O2-H2 blowing | | | | | 37→9.4 (90 s) | | (vi) 0.1% O2-H2 bubbling | | | | | 37→1.5 (180 s) | | (vii) Glow discharge EB | 4.8 | 0.04 | 1860 | 1 | 106→5.2 (900 s) | | Luo et al. (2011) [26] | 10–15 | 0.4 | NA | 2.5~ | 20→1 (1200 s) | | Jiang et al. (2012) [27] | | | | | | | Candle melting | 6 | 0.7 | NA | | 144→ 60 (300 s) | | Mei et al. (2012) [28] | 11~13 | 0.2 | NA | 10−3 | 50→1.8 (20 min melting followed by zone melting) | — | Liu et al. (2012) [29] | | | | | | | Industrial scale | 350 | 500 | NA | 10−3 | 15→0.07 | — | Tan et al. (2013) [30] | 21 | 0.3 | 2001 | 10−3 | 16→0.16 (1400 s) | | | 9 | 0.3 | 1941 | 0.5~ | | (1941 K) | Shi et al. (2013) [31] | 15 | | 1964 | | | (1964 K) | | 21 | | 2051 | | 3320→7 (1920 s) | (2051 K) | Choi et al. (2013) [32] | 12 | 0.25 | | | 34→4.5 (2640 s) | |
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