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Advances in Materials Science and Engineering
Volume 2013, Article ID 905686, 7 pages
http://dx.doi.org/10.1155/2013/905686
Research Article

A Substrate-and-Gate Triggering NMOS Device for High ESD Reliability in Deep Submicrometer Technology

1Department of Electronics Engineering, Chien Hsin University of Science and Technology, No. 229 Chien Hsin Road, Zhongli, Taoyuan 320, Taiwan
2Department of Electronic Engineering, Ming Chuan University, No. 5 De Ming Road, GuiShan, Taoyuan 333, Taiwan

Received 1 October 2013; Accepted 2 November 2013

Academic Editor: Tung-Ming Pan

Copyright © 2013 Chih-Yao Huang and Fu-Chien Chiu. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Chih-Yao Huang and Fu-Chien Chiu, “A Substrate-and-Gate Triggering NMOS Device for High ESD Reliability in Deep Submicrometer Technology,” Advances in Materials Science and Engineering, vol. 2013, Article ID 905686, 7 pages, 2013. https://doi.org/10.1155/2013/905686.