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Advances in Materials Science and Engineering
Volume 2014 (2014), Article ID 187416, 6 pages
Research Article

Optimization of the Cathode Arc Plasma Deposition Processing Parameters of ZnO Film Using the Grey-Relational Taguchi Method

1Department of Electrical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan
2Medical Devices and Opto-Electronics Equipment Department, Metal Industry Research and Development Center, Kaohsiung 821, Taiwan

Received 22 November 2013; Accepted 14 April 2014; Published 8 May 2014

Academic Editor: Chien-Hung Yeh

Copyright © 2014 Shuo-Fu Hsu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We deposited undoped ZnO films on the glass substrate at a low temperature (<70°C) using cathode arc plasma deposition (CAPD) and the grey-relational Taguchi method was used to determine the processing parameters of ZnO thin films. The Taguchi method with an L9 orthogonal array, signal-to-noise () ratio, and analysis of variance (ANOVA) is employed to investigate the performances in the deposition operations. The effect and optimization of deposition parameters, comprising the Ar : O2 gas flow ratio of 1 : 6, 1 : 8, and 1 : 10, the arc current of 50 A, 60 A, and 70 A, and the deposition time of 5 min, 10 min, and 15 min, on the electrical resistivity and optical transmittance of the ZnO films are studied. The results indicate that, by using the grey-relational Taguchi method, the optical transmittance of ZnO thin films increases from 88.17% to 88.82% and the electrical resistivity decreases from -cm to -cm, respectively.