Microstructural and Dielectric Properties of Zr Doped Microwave Sintered CaCu_𝟑Ti_𝟒O_𝟏𝟐 Synthesized by Sol-Gel Route

Figure 2

FE-SEM micrographs of CaCu₃Ti_4−𝑥Zr_𝑥O₁₂ (microwave sintered at 1000°C–10 min) (a) when 𝑥=0, (b) 𝑥=0.02, (c) 𝑥=0.10, (d) 𝑥=0.20, and (e) 𝑥=0.50.

(a)

(b)

(c)

(d)

(e)