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Advances in Materials Science and Engineering
Volume 2014, Article ID 196732, 5 pages
Research Article

Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices

1Department of ECE, Annai Vailankanni College of Engineering, Tamil nadu, India
2Department of IT, RMK College of Engineering and Technology, Chennai, India
3Centre for Information Technology and Engineering, Manonmaniam Sundaranar University, Tirunelveli, India
4Department of ECE, Shri Sapthagiri Institute of Technology, Vellore, India

Received 27 June 2014; Revised 10 August 2014; Accepted 11 August 2014; Published 8 September 2014

Academic Editor: George Z. Kyzas

Copyright © 2014 T. D. Subash et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Indium antimonide nanoparticles were synthesized at room temperature. X-ray diffraction measurements are utilized to characterize the nanocomposites. The InSb nanoparticle has an average particle size in a range of 47 mm to 99 mm which is observed using the XRD result. The InSb is a material which is used to design the transistor. For designing purpose the simulator TCAD is used, by which the HEMT device is structured and its performance is analyzed and it is found that transistor operates as normal devices. This designed device is more valuable since a nanocomposite InSb material is used as a channel in HEMT device, thereby leading to the nanosized HEMT device. In addition, InSb has the property of high saturation velocity and mobility which results in higher performance of the device than any other materials in III-V compounds.