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Advances in Materials Science and Engineering
Volume 2014, Article ID 196732, 5 pages
http://dx.doi.org/10.1155/2014/196732
Research Article

Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices

1Department of ECE, Annai Vailankanni College of Engineering, Tamil nadu, India
2Department of IT, RMK College of Engineering and Technology, Chennai, India
3Centre for Information Technology and Engineering, Manonmaniam Sundaranar University, Tirunelveli, India
4Department of ECE, Shri Sapthagiri Institute of Technology, Vellore, India

Received 27 June 2014; Revised 10 August 2014; Accepted 11 August 2014; Published 8 September 2014

Academic Editor: George Z. Kyzas

Copyright © 2014 T. D. Subash et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. G. Ira and V. Mehrotra, “Synthesis of magnetic, dielectric or phosphorescent NANO composites,” U.S. Patent 7,431,862, 2008. View at Google Scholar
  2. T. Chiang, “A novel short-channel model for threshold voltage of trigate MOSFETs with localized trapped charges,” IEEE Transactions on Device and Materials Reliability, vol. 12, no. 2, pp. 311–316, 2012. View at Publisher · View at Google Scholar · View at Scopus
  3. R. J. Baker, CMOS: Circuit Design, Layout, and Simulation, Wiley-IEEE, 3rd edition, 2010.
  4. W. S. Lau, L. Zhong, A. Lee et al., “Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy,” Applied Physics Letters, vol. 71, no. 4, pp. 500–502, 1997. View at Publisher · View at Google Scholar · View at Scopus
  5. K. Roy and K. S. Yeo, Low Voltage, Low Power VLSI Subsystems, McGraw-Hill Professional, 2004.
  6. K. Ko, J. Seo, D. Kim et al., “The growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation termination,” Nanotechnology, vol. 20, no. 22, Article ID 225201, 2009. View at Publisher · View at Google Scholar · View at Scopus
  7. H. Uchiyama, T. Taniguchi, and M. Kudo, “Suppression of plasma-induced fluorine damage in P-HEMTs using strained InSb barrier,” IEICE Electronics Express, vol. 1, no. 16, pp. 513–517, 2004. View at Publisher · View at Google Scholar
  8. K. Takei, S. Chuang, H. Fang et al., “Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness,” Applied Physics Letters, vol. 99, no. 10, Article ID 103507, 2011. View at Publisher · View at Google Scholar · View at Scopus
  9. S. T. Myers, J. E. Baker, A. C. S. Readhead, E. M. Leitch, and T. Herbig, “Measurements of the sunyaev-zeldovich effect in the nearby clusters A478, A2142, and A2256,” Astrophysical Journal Letters, vol. 485, no. 1, pp. 1–21, 1997. View at Publisher · View at Google Scholar · View at Scopus
  10. M. Levinshtein, M. S. Michael, and S. Rumyanstev, Handbook Series on Semiconductor Parameters, vol. 2, World Scientific, Singapore, 1996.
  11. C. Hilsum, “Simple empirical relationship between mobility and carrier concentration,” Electronics Letters, vol. 10, no. 13, pp. 259–260, 1974. View at Google Scholar · View at Scopus
  12. S. Liu, Z. Dai, H. Chen, and H. Ju, “Immobilization of hemoglobin on zirconium dioxide nanoparticles for preparation of a novel hydrogen peroxide biosensor,” Biosensors and Bioelectronics, vol. 19, no. 9, pp. 963–969, 2004. View at Publisher · View at Google Scholar · View at Scopus
  13. H. Zhou, R. Tian, M. Ye et al., “Highly specific enrichment of phosphopeptides by zirconium dioxide nanoparticles for phosphoproteome analysis,” Electrophoresis, vol. 28, no. 13, pp. 2201–2215, 2007. View at Publisher · View at Google Scholar · View at Scopus
  14. K. Kumar and S. Jabaraj, “Nand gate using FinFET for nanoscale technology,” Journal of Engineering Science and Technology, vol. 2, no. 5, pp. 1351–1358, 2010. View at Google Scholar
  15. J. Conde, A. Cerdeira, M. Pavanello, V. Kilchytska, and D. Flandre, “3D simulation of triple-gate MOSFETs with different mobility regions,” Microelectronic Engineering, vol. 88, no. 7, pp. 1633–1636, 2011. View at Publisher · View at Google Scholar · View at Scopus
  16. C. S. S. R. Kumar, M. Aghasyan, H. Modrow et al., “Synthesis and characterization of S-Au interaction in gold nanoparticle bound polymeric beads,” Journal of Nanoparticle Research, vol. 6, no. 4, pp. 369–376, 2004. View at Publisher · View at Google Scholar · View at Scopus
  17. D.-H. Kim and J. A. del Alamo, “Beyond CMOS: logic suitability of In0.7Ga0.3As HEMT,” in Proceedings of the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH '06), pp. 251–254, Vancouver, BC, Canada, April 2006.
  18. D.-H. Kim, J. A. del Alamo, J.-H. Lee, and K.-S. Seo, “Performance evaluation of 50 nm In/sub 0.7/Ga/sub 0.3/As HEMTs for beyond-CMOS logic applications,” in Proceedings of the IEEE International Electron Devices Meeting (IEDM '05), pp. 767–770, Washington, DC, USA, 2005.