Table of Contents Author Guidelines Submit a Manuscript
Advances in Materials Science and Engineering
Volume 2014, Article ID 197937, 12 pages
http://dx.doi.org/10.1155/2014/197937
Research Article

Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET

1Department of ECE, Guru Jambheshwar University of Science and Technology, Teaching Block 7, Hisar, Haryana 125001, India
2Department of CSE, Krishna Institute of Engineering and Technology, Ghaziabad, Uttar Pradesh 201206, India

Received 12 May 2014; Revised 5 August 2014; Accepted 6 August 2014; Published 10 September 2014

Academic Editor: Baibiao Huang

Copyright © 2014 Ramnish Kumar et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. M. Bhattacharya, J. Jogi, R. S. Gupta, and M. Gupta, “Scattering parameter based modeling and simulation of symmetric tied-gate InAlAs/InGaAs DG-HEMT for millimeter-wave applications,” Solid-State Electronics, vol. 63, no. 1, pp. 149–153, 2011. View at Publisher · View at Google Scholar · View at Scopus
  2. A. Ahlawat, M. Pandey, and S. Pandey, “Microwave analysis of A 70 nm InGaAs pHEMT on InP substrate for nanoscale digital IC application,” Microwave and Optical Technology Letters, vol. 49, no. 10, pp. 2462–2470, 2007. View at Publisher · View at Google Scholar · View at Scopus
  3. Rashmi, A. Kranti, S. Haldar, and R. S. Gupta, “An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs,” Solid-State Electronics, vol. 46, no. 5, pp. 621–630, 2002. View at Publisher · View at Google Scholar · View at Scopus
  4. O. Ambacher, J. Smart, J. R. Shealy et al., “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- And Ga-face AIGaN/GaN heterostructures,” Journal of Applied Physics, vol. 85, no. 6, pp. 3222–3233, 1999. View at Publisher · View at Google Scholar · View at Scopus
  5. R. K. Tyagi, A. Ahlawat, M. Pandey, and S. Pandey, “An analytical two-dimensional model for AlGaN/GaN HEMT with polarization effects for high power applications,” Microelectronics Journal, vol. 38, no. 8-9, pp. 877–883, 2007. View at Publisher · View at Google Scholar · View at Scopus
  6. R. Kumar, S. K. Arya, and A. Ahlawat, “Analysis of small-signal parameters of 2-D MODFET with polarization effects for microwave analysis,” International Journal of VLSI Design & Communication, vol. 4, no. 2, pp. 51–61, 2013. View at Google Scholar
  7. R. A. Pucel, H. A. Haus, and H. Statz, “Signal and noise properties of gallium arsenide microwave field effect transistors,” Advances in Electronics and Electron Physics, vol. 38, pp. 195–265, 1975. View at Publisher · View at Google Scholar · View at Scopus
  8. T. M. Brookes, “The noise properties of high electron mobility transistors,” IEEE Transactions on Electron Devices, vol. 33, no. 1, pp. 52–57, 1986. View at Google Scholar · View at Scopus
  9. V. Kumar, W. Lu, R. Schwindt et al., “AlGaN/GaN HEMTs on SiC with fT of over 120 GHz,” IEEE Electron Device Letters, vol. 23, no. 8, pp. 455–457, 2002. View at Publisher · View at Google Scholar · View at Scopus
  10. S. Sen, M. K. Pandey, and R. S. Gupta, “Two-dimensional C-V model of AlGaAs/GaAs modulation doped field effect transistor (MODFET) for high frequency applications,” IEEE Transactions on Electron Devices, vol. 46, no. 9, pp. 1818–1823, 1999. View at Publisher · View at Google Scholar · View at Scopus
  11. H. K. Huang, Y. H. Wang, C. L. Wu, J. C. Wang, and C. S. Chang, “Super low noise InGaP gated PHEMT,” IEEE Electron Device Letters, vol. 23, no. 2, pp. 70–72, 2002. View at Publisher · View at Google Scholar · View at Scopus
  12. F. E. Rangel Patino and J. R. Camacho Perez, “Modeling and simulation of pseudomorphic HEMTs for analog circuit design and analysis,” in Delphi Automotive Systems/Delco Electronics, pp. 277–282, Instituto Tecnologico de Chihuahua, Electro, 2001. View at Google Scholar
  13. J. C. Sippel, S. S. Islam, and S. S. Mukherjee, “A physics-based model of DC and microwave characteristics of GaN/AlGaN HEMTs,” International Journal of RF and Microwave Computer-Aided Engineering, vol. 17, no. 3, pp. 254–264, 2007. View at Publisher · View at Google Scholar · View at Scopus
  14. L. Stepan, “Power-added efficiency errors with RF power amplifiers,” International Journal of Electronics, vol. 82, no. 3, pp. 303–312, 1997. View at Publisher · View at Google Scholar · View at Scopus
  15. P. Yan, W. Liang, Y. Tingting et al., “Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT,” Journal of Semiconductors, vol. 31, no. 10, Article ID 104002, 2010. View at Publisher · View at Google Scholar · View at Scopus
  16. M. Bhattacharya, J. Jogi, R. S. Gupta, and M. Gupta, “An accurate charge-control-based approach for noise performance assessment of a symmetric tied-gate InAlAs/InGaAs DG-HEMT,” IEEE Transactions on Electron Devices, vol. 59, no. 6, pp. 1644–1652, 2012. View at Publisher · View at Google Scholar · View at Scopus
  17. R. Angu Agrawal, S. Sen, S. Haldar, and R. S. Gupta, “Analytical model for dc characteristics and small signal parameters of AlGaN / GaN modulation-doped field effect transistor for microwave circuit applications,” Microwave and Optical Technology Letters, vol. 27, no. 6, pp. 413–419, 2000. View at Google Scholar
  18. Y.-F. Wu, S. Keller, P. Kozodoy et al., “Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V,” IEEE Electron Device Letters, vol. 18, no. 6, pp. 290–292, 1997. View at Publisher · View at Google Scholar · View at Scopus
  19. C. Campbell, C. Lee, V. Williams et al., “A wideband power amplifier MMIC utilizing GaN on SiC HEMT technology,” IEEE Journal of Solid-State Circuits, vol. 44, no. 10, pp. 2640–2647, 2009. View at Google Scholar
  20. R. K. Tyagi, A. Ahlawat, M. Pandey, and S. Pandey, “Noise analysis of sub quarter micrometer AlGaN/GaN microwave power HEMT,” Journal of Semiconductor Technology and Science, vol. 9, no. 3, pp. 125–135, 2009. View at Publisher · View at Google Scholar · View at Scopus