Morphological, Structural, and Optical Properties of Single-Phase Cu(In,Ga)Se<sub>2</sub> Thin Films from the Selenization of Thermally Evaporated InSe/Cu/GaSe Precursors

<table>PL spectra for CuIn<sub>1−<i>x</i></sub>Ga<sub><i>x</i></sub>Se<sub>2</sub> samples selenized at 550°C for 60 min, for different gallium concentration (<i>x</i> = 0.02, 0.22, and 0.35). Measurements were conducted at 77 K, using a 5 mW laser at an excitation wavelength of 514.5 nm. The increase of the broadband peak position with increasing gallium content (increase in <i>x</i>) is observed.</table>

Advances in Materials Science and Engineering

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Figure 3: Morphological, Structural, and Optical Properties of Single-Phase Cu(In,Ga)Se<sub>2</sub> Thin Films from the Selenization of Thermally Evaporated InSe/Cu/GaSe Precursors 

Figure 3 | Morphological, Structural, and Optical Properties of Single-Phase Cu(In,Ga)Se2 Thin Films from the Selenization of Thermally Evaporated InSe/Cu/GaSe Precursors 