Optical and Electrical Properties of Ag-Doped In₂S₃ Thin Films Prepared by Thermal Evaporation

Table 1

The optical and electrical properties of the In₂S₃:Ag films deposited with different dopant levels.

Sample	Ag at.%	Eg	Resistivity	Carrier concentration
			(Ω⋅cm)	(10^18 cm^−3)
IS	0	2.82	~1000	~1.0 × 10^−5
IS1	0.55	2.77	0.2100	2.311
IS2	1.09	2.67	0.2127	3.615
IS3	1.58	2.72	0.2797	2.752
IS4	1.62	2.70	0.1679	2.241
IS5	1.90	2.73	0.2637	2.424
IS6	2.15	2.70	0.3691	2.655
IS7	3.31	2.69	0.3255	1.419
IS8	4.21	2.69	0.3448	2.289