Bipolar Switching Characteristics of RRAM Cells with CaBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> Film

<table class="table-group" id="tab1"><tr><td><table class="table"><tr><td class="thead-hr" colspan="2"><hr/></td></tr><tr><td align="left">Target diameter (inch)</td><td align="center">2</td></tr><tr><td align="left">Substrate temperature (°C)</td><td align="center">30</td></tr><tr><td align="left">RF power (W)</td><td align="center">100</td></tr><tr><td align="left">Chamber pressure (mTorr)</td><td align="center">20</td></tr><tr><td align="left">Oxygen concentration (%)</td><td align="center">0</td></tr><tr><td align="left">Deposition time (h)</td><td align="center">2</td></tr><tr><td align="left">Annealing temperature (°C)</td><td align="center">450–550</td></tr><tr class="table-tr"><td colspan="2"><hr class="tbody-hr"/></td></tr></table></td></tr></table>

Advances in Materials Science and Engineering

tab1

Table 1

Table 1: Bipolar Switching Characteristics of RRAM Cells with CaBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> Film 

Advances in Materials Science and Engineering

Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film

Table 1

Bipolar Switching Characteristics of RRAM Cells with CaBi₄Ti₄O₁₅ Film