Electrical Characterization of Sol-Gel Derived TiO<sub>2</sub> Film on c-Si Substrate by Admittance Measurement

<table>(a) Capacitance and (b) conductance as a function of bias voltage on Ag/TiO<sub>2</sub>/p-c-Si structure under exposure light.</table>

Advances in Materials Science and Engineering

Figure 5: Electrical Characterization of Sol-Gel Derived TiO<sub>2</sub> Film on c-Si Substrate by Admittance Measurement 