Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer

Figure 1

(a) Initial InGaN PC structure studied in [27]. (b) Layer structure of the modified solar cell structure incorporating the GaN cap layer. (c) Cross-sectional etch geometry for the initial structure in (a). (d) Cross-sectional etch geometry for the modified structure in (b). (e) 3D view for the initial structure in (a). (f) 3D view for the modified structure in (b).

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