Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer

Figure 2

Calculated absorptance spectra for an optimized (,  nm, and  nm) solar cell structure with a 130 nm-thick GaN cap layer and a 20 nm-thick InGaN layer in the case of parallel (blue dotted), perpendicular (green dashed) polarizations with respect to the photonic crystal pattern, and unpolarized light incidence (solid red).