Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer
Figure 4
Calculated absorptance spectrum and optical field intensity distribution for a solar cell structure with the following parameters: 20 nm-thick InGaN layer, 130 nm-thick GaN cap layer, 300 nm lattice length, 50% fill factor, and 120 nm etch depth. (a) Calculated absorptance. (b) Field distribution at 555 nm wavelength. (c) Field distribution at 610 nm wavelength. (d) Field distribution at 650 nm wavelength.
