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Advances in Materials Science and Engineering
Volume 2014, Article ID 608608, 8 pages
Research Article

A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2 and SF6/O2

1School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University, Goyang 412-791, Republic of Korea
2Department of Materials Science and Engineering, Korea Aerospace University, Goyang 412-791, Republic of Korea

Received 1 May 2013; Accepted 8 November 2013; Published 4 February 2014

Academic Editor: Mohd Sapuan Salit

Copyright © 2014 Seon-Geun Oh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The characteristics of the dry etching of :H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE) system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz), pressure, and gas flow ratio. For the :H film, the etch rates obtained using NF3/O2 were higher than those obtained using SF6/O2 under various process conditions. The relationships between the etch rates and the usual monitoring parameters—the optical emission spectroscopy (OES) intensity of atomic fluorine (685.1 nm and 702.89 nm) and the voltages and —were investigated. The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density. The etch rate was proportional to the product of the OES intensity of atomic fluorine and the square root of the voltages on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.