A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF<sub>3</sub>/O<sub>2</sub> and SF<sub>6</sub>/O<sub>2</sub>

<table>Diagram of the dual-frequency CCP-RIE with OES and <i>V-I</i> probe.</table>

Advances in Materials Science and Engineering

Figure 1: A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF<sub>3</sub>/O<sub>2</sub> and SF<sub>6</sub>/O<sub>2</sub> 