A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF<sub>3</sub>/O<sub>2</sub> and SF<sub>6</sub>/O<sub>2</sub>

<table>(a) Voltage of high-frequency RF source <svg height="15.4" id="M15" style="vertical-align:-3.39066pt" version="1.1" viewbox="0 0 19.5 15.4" width="19.5" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.675,15.187)"><path d="M499 88q-41 -46 -83.5 -73t-68.5 -27q-41 0 -19 98l52 225q10 43 8 59.5t-16 16.5q-37 0 -112 -65t-117 -135q-14 -42 -38 -179q-36 -7 -75 -20l-7 8l127 594q8 40 2.5 49t-35.5 9h-35l5 25q36 3 71.5 13t56.5 18t25 8q11 0 3 -38l-88 -417h2q77 102 195 167q44 24 79 24
q61 0 30 -130l-52 -220q-8 -33 4 -33q8 0 31 14.5t43 33.5z" id="x210E"></path></g>
</svg>, (b) voltage of low-frequency RF source <svg height="15.4" id="M16" style="vertical-align:-3.39066pt" version="1.1" viewbox="0 0 16.5625 15.4" width="16.5625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.675,15.187)"><path d="M238 681l-124 -585q-7 -31 4 -31q10 0 37.5 18.5t49.5 41.5l16 -22q-40 -48 -89.5 -81.5t-76.5 -33.5q-42 0 -16 122l105 488q7 32 0 41t-39 9h-35l5 26q35 3 71 13t58 17.5t26 7.5q14 0 8 -31z" id="x1D459"></path></g>
</svg>, and (c) sum of <svg height="15.4" id="M17" style="vertical-align:-3.39066pt" version="1.1" viewbox="0 0 19.5 15.4" width="19.5" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.675,15.187)"><path d="M499 88q-41 -46 -83.5 -73t-68.5 -27q-41 0 -19 98l52 225q10 43 8 59.5t-16 16.5q-37 0 -112 -65t-117 -135q-14 -42 -38 -179q-36 -7 -75 -20l-7 8l127 594q8 40 2.5 49t-35.5 9h-35l5 25q36 3 71.5 13t56.5 18t25 8q11 0 3 -38l-88 -417h2q77 102 195 167q44 24 79 24
q61 0 30 -130l-52 -220q-8 -33 4 -33q8 0 31 14.5t43 33.5z" id="x210E"></path></g>
</svg> and <svg height="15.4" id="M18" style="vertical-align:-3.39066pt" version="1.1" viewbox="0 0 16.5625 15.4" width="16.5625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.675,15.187)"><path d="M238 681l-124 -585q-7 -31 4 -31q10 0 37.5 18.5t49.5 41.5l16 -22q-40 -48 -89.5 -81.5t-76.5 -33.5q-42 0 -16 122l105 488q7 32 0 41t-39 9h-35l5 26q35 3 71 13t58 17.5t26 7.5q14 0 8 -31z" id="x1D459"></path></g>
</svg> as a function of power ratio.</table>

Advances in Materials Science and Engineering

fig5

Figure 5

Figure 5: A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF<sub>3</sub>/O<sub>2</sub> and SF<sub>6</sub>/O<sub>2</sub> 

Advances in Materials Science and Engineering

A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2 and SF6/O2

Figure 5

A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF₃/O₂ and SF₆/O₂