Table of Contents Author Guidelines Submit a Manuscript
Advances in Materials Science and Engineering
Volume 2014, Article ID 608608, 8 pages
http://dx.doi.org/10.1155/2014/608608
Research Article

A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2 and SF6/O2

1School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University, Goyang 412-791, Republic of Korea
2Department of Materials Science and Engineering, Korea Aerospace University, Goyang 412-791, Republic of Korea

Received 1 May 2013; Accepted 8 November 2013; Published 4 February 2014

Academic Editor: Mohd Sapuan Salit

Copyright © 2014 Seon-Geun Oh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. D. J. Kim, Y. B. Yun, and J. Y. Hwang, “Role of N2 during chemical dry etching of silicon oxide layers using NF3/N2/Ar remote plasmas,” Microelectronic Engineering, vol. 84, no. 4, pp. 560–566, 2007. View at Publisher · View at Google Scholar
  2. B. E. E. Kastenmeier, “Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures,” Journal of Vacuum Science and Technology A, vol. 16, no. 4, pp. 2047–2056, 1998. View at Publisher · View at Google Scholar
  3. P. Machima and N. Hershkowitz, “SiO2 and Si3N4 etch mechanisms in NF3/hydrocarbon plasma,” Journal of Physics D, vol. 39, no. 4, pp. 673–684, 2006. View at Publisher · View at Google Scholar · View at Scopus
  4. G. Agarwal, S. D. Iuliis, L. Serenelli, En. Salza, and M. Tucci, “Dry texturing of mc-Si wafers,” Physica Status Solidi C, vol. 8, no. 3, pp. 903–906, 2011. View at Publisher · View at Google Scholar
  5. C. Reyes-Betanzo and S. A. Moshkalyyov, “Mechanisms of silicon nitride etching by electron cyclotron resonance plasmas using SF6- and NF3-based gas mixtures,” Journal of Vacuum Science and Technology A, vol. 22, p. 1513, 2004. View at Publisher · View at Google Scholar
  6. J. H. Kim and Y. C. Hong, “Simple microwave plasma source at atmospheric pressure,” Journal of the Korean Physical Society, vol. 42, p. S876, 2003. View at Google Scholar
  7. J. H. Kim and C. H. Oh, “Effect of N-based gases to C3F8/O2 on global warming during silicon nitride PECVD chamber cleaning using a remote plasma source,” Journal of the Korean Physical Society, vol. 42, p. S800, 2003. View at Google Scholar
  8. H. Hsueh, R. T. McGrath, B. Ji, B. S. Felker, J. G. Langan, and E. J. Karwacki, “Ion energy distributions and optical emission spectra in NF3-based process chamber cleaning plasmas,” Journal of Vacuum Science and Technology B, vol. 19, no. 4, pp. 1346–1357, 2001. View at Publisher · View at Google Scholar · View at Scopus
  9. P. Brault and P. Ranson, “Analysis of SF6 and F2 plasma etched silicon surfaces: an x-ray photoelectron spectroscopy investigation,” Applied Physics Letters, vol. 57, p. 2649, 1990. View at Publisher · View at Google Scholar
  10. Y. B. Yun, S. M. Park, and N.-E. Lee, “Effect of plasma modulation on Si chemical dry etching in F2 remote plasmas,” Journal of the Korean Physical Society, vol. 53, no. 5, pp. 2386–2390, 2008. View at Google Scholar · View at Scopus
  11. S. Nakamura and M. Itano, “Comparative studies of perfluorocarbon alternative gas plasmas for contact hole etch,” Japanese Journal of Applied Physics, vol. 42, pp. 5759–5764, 2003. View at Publisher · View at Google Scholar
  12. Ch. Steinbrchel, H. W. Lehmann, and K. Frick, “Mechanism of dry etching of silicon dioxide. A case of direct reactive ion etching,” Journal of the Electrochemical Society, vol. 132, no. 1, pp. 180–186, 1985. View at Publisher · View at Google Scholar
  13. F. Fracassi, R. D'Agostino, A. Fornelli, and T. Shirafuji, “Dry etching of SiO2 thin films with perfluoropropenoxide-O2 and perfluoropropene-O2 plasmas,” Journal of Applied Physics, vol. 41, pp. 6287–6290, 2002. View at Publisher · View at Google Scholar
  14. W. T. Tsai, H. P. Chen, and W. Hsien, “A review of uses, environmental hazards and recovery/recycle technologies of perfluorocarbons (PFCs) emissions from the semiconductor manufacturing processes,” Journal of Loss Prevention in the Process Industries, vol. 15, no. 2, pp. 65–75, 2002. View at Google Scholar
  15. J. G. Owens, “Low GWP alternatives to HFCs and PFCs,” in Proceedings of the 1999 Taipei International Conference on Atmosphere Protection, Taipei, Taiwan, 1999.
  16. L. C. Pruette, S. M. Karecki, R. Reif et al., “Evaluation of trifluoroacetic anhydride as an alternative plasma enhanced chemical vapor deposition chamber clean chemistry,” Journal of Vacuum Science and Technology A, vol. 16, pp. 1577–1581, 1998. View at Google Scholar
  17. H. Reichardt, A. Frenzel, and K. Schober, “Environmentally friendly wafer production: NF3 remote microwave plasma for chamber cleaning,” Microelectronic Engineering, vol. 56, no. 1-2, pp. 73–76, 2001. View at Publisher · View at Google Scholar · View at Scopus
  18. S. Q. Gu, R. Fujimoto, and P. McGrath, “Impact of F species on plasma charge damage in a RF asher,” in Proceedings of the 7th International Symposium on Plasma- and Process-Induced Damage, Maui, Hawaii, USA, 2002.
  19. A. Matsutani, H. Ohtsuki, and F. Koyama, “Reactive ion etching of Si using Ar/F2 plasma,” Japanese Journal of Applied Physics, vol. 49, Article ID 06GH05-2, 3 pages, 2010. View at Google Scholar
  20. G. Bruno, P. Capezzuto, P. Manodoro et al., “On the use of NF3 plasmas for amorphous silicon ablation,” in Proceedings of the 11th International Symposium on Plasma Chemistry, p. 875, Loughborough, UK, 1993.
  21. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, p. 596, John Wiley & Sons, Hoboken, NJ, USA, 2005.
  22. G. Kokkoris, A. Panagiotopoulos, A. Goodyear, M. Cooke, and E. Gogolides, “A global model for SF6 plasmas coupling reaction kinetics in the gas phase and on the surface of the reactor walls,” Journal of Physics D, vol. 42, Article ID 055209, 5 pages, 2009. View at Publisher · View at Google Scholar
  23. B. Bai, An experimental study and modeling of Transformer-Coupled Toroidal Plasma processing of materials [Ph.D. thesis], Massachusetts Institute of Technology, Boston, Mass, USA, 2006.
  24. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, p. 410, John Wiley & Sons, Hoboken, NJ, USA, 2005.
  25. C. J. Mogab, “The loading effect in plasma etching,” Journal of the Electrochemical Society, vol. 124, no. 8, pp. 1262–1268, 1977. View at Google Scholar · View at Scopus
  26. I. P. Herman, “Optical diagnostics for thin film processing,” Annual Review of Physical Chemistry, vol. 54, pp. 277–305, 2003. View at Publisher · View at Google Scholar
  27. Z. Chen, V. M. Donnelly, D. J. Economou et al., “Measurement of electron temperatures and electron energy distribution functions in dual frequency capacitively coupled CF4/O2 plasmas using trace rare gases optical emission spectroscopy,” Journal of Vacuum Science and Technology A, vol. 27, pp. 1159–1165, 2009. View at Publisher · View at Google Scholar
  28. W. Liu, A. Zhu, X. Li et al., “Determination of plasma parameters in a dual-frequency capacitively coupled CF4 plasma using optical emission spectroscopy,” Plasma Science and Technology, vol. 15, no. 9, p. 885, 2013. View at Google Scholar