Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching

Table 1

Anisotropy factor 𝑓 depending on the etching parameters (pressure and power). Symbols in brackets belong to Figure 6.

	50 mTorr	70 mTorr	90 mTorr
90 W	0.58 (○)	0.55 (□)	0.43 (⋄)
120 W	0.61 (△)	0.53 (▿)	—
150 W	0.65 (▷)	0.51 (◁)	—