Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate

Figure 6

HR-XRD reciprocal space-maps of the (10–15) reflection for AlInN/GaN/Al₂O₃ structures with different indium content. In content changes as (a) 4%, (b) 18%, (c) 20%, (d) 47, and (e) 48%.

(a)

(b)

(c)

(d)

(e)