Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate

Table 3

The calculated mosaic structures parameters of the AlInN epilayers that were grown on GaN/sapphire structures, including the mean twist angle, , mean tilt angle, , lateral coherence length, , vertical coherence length, , and vertical heterogeneous strain, are given.

In content ()	AlInN epilayers
	(°)	(°)	(nm)	(nm)
0.04	0.174	0.118	614.0	243.2	8.9
0.18	0.223	0.095	898.1	28.3	17.0
0.20	0.248	0.080	559.1	34.8	0.51
0.47	0.100	0.221	2000.1	230.8	15.0
0.48	0.165	0.238	333.3	294.1	66.0